, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1051 description ? high current capability ? collector-emitter breakdown voltage- : v(br)ceo=-150v(min.) ? high power dissipation applications ? designed for power amplifer and general purpose applications. absolute maximum ratings(ta=25'c) ?"?n ', pin 1.base 2. better 3. collector (case) to-3 package symbol vcbo vceo vebo ic pc t, tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc=25'c junction temperature storage temperature value -150 -150 -5 -15 150 150 -55-150 unit v v v a w 'c "c dim a b c d silicon pnp power transistor 2SA1051 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) igbo iebo mfe fr parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product conditions lc= -30ma; ib= 0 lc=-1ma; ie=0 !e=-1ma; lc= 0 lc= -7.5a; ib= -0.75a vcb=-150v; ie=0 veb= -5v; ig= 0 lc=-1a;vce=-5v lc=-1a;vce=-10v min -150 -150 -5 55 typ. 60 max -2.0 -10 -10 240 unit v v v v ua ma mhz classifications r 55-110 o 80-160 y 120-240
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